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Dark conduction mechanisms of PTQBDT based heterojunction diode

dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorHacıoǧlu, Şerife Özdemir
dc.contributor.authorÇırpan, Ali
dc.contributor.authorToppare, Levent Kamil
dc.date.accessioned2023-12-18T05:57:31Z
dc.date.available2023-12-18T05:57:31Z
dc.date.issued2023en_US
dc.identifier.citationGullu, H.H., Yıldız, D.E., Hacioglu, S.O., Cirpan, A., Toppare, L. (2023). Dark conduction mechanisms of PTQBDT based heterojunction diode. Physica Scripta, 98 (1), art. no. 015819. https://doi.org/10.1088/1402-4896/aca727en_US
dc.identifier.issn0031-8949
dc.identifier.issn1402-4896
dc.identifier.urihttps://doi.org/10.1088/1402-4896/aca727
dc.identifier.urihttps://hdl.handle.net/20.500.12508/2678
dc.description.abstractAl:LiF/PTQBT:PCBM/PEDOT:PSS/ITO/glass organic-based diode is fabricated with different weight ratios in PTQBT:PCBM active layer. The diodes D1, D2 and D3 are prepared using the precursor solution for spin coating process as 1:2, 1:3 and 1:4, respectively. Under dark, main diode parameters are extracted by conventional thermionic emission theory using the results of measurements. Parasitic resistance contribution, non-ideal barrier height formation and high values of ideality factor indicate possible effects of space charge limited current flow mechanism on forward biased characteristics. At saturated voltage region, series resistances are calculated and the results are evaluated according to Cheung's method. The possible voltage sharing between interface layer and depletion region are also investigated by analysis of density of interface states. In addition, field effect is found in a major role on the reverse current flow and the mechanism is evaluated according to Schottky-Richardson model.en_US
dc.language.isoengen_US
dc.publisherInstitute of Physicsen_US
dc.relation.isversionof10.1088/1402-4896/aca727en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectElektrical characterizationen_US
dc.subjectHeterojunctionen_US
dc.subjectPolymeren_US
dc.subjectSpin-coatingen_US
dc.subjectThin filmen_US
dc.subject.classificationSchottky Diodes
dc.subject.classificationThermionic Emission
dc.subject.classificationElectrical Properties
dc.subject.classificationPhysics - Silicon Systems - Ideality Factor
dc.subject.otherElectric resistance
dc.subject.otherInterface states
dc.subject.otherLithium compounds
dc.subject.otherSemiconductor diodes
dc.subject.otherThermionic emission
dc.subject.otherActive layer
dc.subject.otherConduction mechanism
dc.subject.otherElektrical characterization
dc.subject.otherHeterojunction diodes
dc.subject.otherOrganics
dc.subject.otherPEDOT/PSS
dc.subject.otherPrecursor solutions
dc.subject.otherSpin coating process
dc.subject.otherThin-films
dc.subject.otherWeight ratios
dc.subject.otherHeterojunctions
dc.subject.otherCurrent transport
dc.subject.otherInsulator layer
dc.subject.otherPolymers
dc.subject.otherParameters
dc.subject.otherPoole-frenkel
dc.subject.otherSchottky-barrier diodes
dc.titleDark conduction mechanisms of PTQBDT based heterojunction diodeen_US
dc.typearticleen_US
dc.relation.journalPhysica Scriptaen_US
dc.contributor.departmentMühendislik ve Doğa Bilimleri Fakültesi -- Mühendislik Temel Bilimleri Bölümüen_US
dc.identifier.volume98en_US
dc.identifier.issue1en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.contributor.isteauthorHacıoǧlu, Şerife Özdemir
dc.relation.indexWeb of Science - Scopusen_US
dc.relation.indexWeb of Science Core Collection - Science Citation Index Expanded


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